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(R) STGD7NB60S N-CHANNEL 7A - 600V DPAK Power MESHTM IGBT TYPE STGD7NB60S s V CES 600 V V CE(sat ) < 1.6 V IC 7A s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 20 20 15 7 60 55 0.44 -65 to 150 150 Un it V V V A A A W W /o C o o C C (*) Pulse width limited by safe operating area June 1999 1/8 STGD7NB60S THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 2.27 100 1.5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l V BR(CES) V BR(ECR) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Emitter-Collector Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 A IC = 1 mA V GE = 0 VGE = 0 T j = 25 oC o T j = 125 C V CE = 0 Min. 600 20 10 100 100 Typ. Max. Unit V V A A nA V CE = Max Rating V CE = Max Rating V GE = 20 V ON () Symbo l V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V V GE = 15 V Test Con ditions IC = 250 A IC = 3 A IC = 7 A IC = 7 A Min. 2.5 1 1.2 1.1 Typ. Max. 5 1.4 1.6 Unit V V V V Tj = 125 o C DYNAMIC Symbo l gf s C i es C o es C res QG I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Latching Current Test Con ditions V CE =25 V V CE = 25 V IC = 7 A f = 1 MHz V GE = 0 Min. 5 610 65 12 33 15 780 85 15 Typ. Max. Unit S pF pF pF nC A V CE = 400 V V clamp = 480 V T j = 150 o C IC = 7 A V GE = 15 V R G =1k SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Con ditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 1 K T j = 125 o C IC = 7 A R G = 1 K IC = 7 A V GE = 15 V Min. Typ. 0.7 0.46 8 0.4 Max. Unit s s A/s mJ 2/8 STGD7NB60S ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbo l tc t r (v off ) tf E o ff(**) tc t r (v off ) tf E o ff(**) Parameter Test Con ditions IC = 7 A V GE = 15 V Min. Typ. 2.2 1.2 1.2 3.5 3.8 1.2 1.9 5.3 Max. Unit s s s mJ s s s mJ Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 100 Fall T ime Turn-off Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 100 Fall T ime T j = 125 o C Turn-off Switching Loss IC = 7 A V GE = 15 V (*) Pulse width limited by safe operating area () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGD7NB60S Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGD7NB60S Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Temperature Off Losses vs Collector Current 5/8 STGD7NB60S Switching Off Safe Operatin Area Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/8 STGD7NB60S TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 DIM. H A C2 C DETAIL "A" A1 L2 D DETAIL "A" B = = 3 B2 = = G E 2 L4 1 = = A2 0068772-B 7/8 STGD7NB60S Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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